MMBT4403 [BL Galaxy Electrical]
PNP General Purpose Transistor; PNP通用晶体管
| 型号： | MMBT4403 |
| 厂家： | 
BL Galaxy Electrical |
| 描述： | PNP General Purpose Transistor |
| 文件： | 总4页 (文件大小：193K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BL Galaxy Electrical
Production specification
PNP General Purpose Transistor
MMBT4403
FEATURES
Pb
Lead-free
z
Epitaxial planar die construction.
Complementary NPN type available
(MMBT4401).
z
z
z
Also available in lead free version.
Ideal for medium power amplification and switching.
APPLICATIONS
z
Ideal for medium power amplification and switching
SOT-23
ORDERING INFORMATION
Type No.
Marking
2T
Package Code
SOT-23
MMBT4403
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
Symbol
VCBO
VCEO
VEBO
IC
Parameter
Value
UNIT
V
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
Collector dissipation
junction and storage temperature
-40
-40
-5
V
V
-0.6
A
PC
0.35
-55-150
W
°C
Tj ,Tstg
ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Document number: BL/SSSTC074
Rev.A
www.galaxycn.com
1
BL Galaxy Electrical
Production specification
PNP General Purpose Transistor
MMBT4403
Symbol
V(BR)CBO
Parameter
Test conditions
MIN. MAX. UNIT
-40
Collector-base breakdown voltage
IC=-100μA,IE=0
V(BR)CEO
V(BR)EBO
ICBO
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
collector cut-off current
IC=-1mA,IB=0
-40
-5
IE=-100μA,IC=0
IE = 0; VCB = -35V
IE = 0; VCB = -35V
-
-0.1
-0.1
-0.1
μA
μA
μA
ICEO
collector cut-off current
IEBO
emitter cut-off current
IC = 0; VEB = -4V
-
VCE = -1V; IC= -0.1mA
30
V
V
V
V
CE = -1V;IC = -1mA
CE = -1V;IC = -10mA
CE = -2V;IC = -150mA
CE = -2V;IC = -500mA
60
hFE
DC current gain
100
100
20
300
IC = -150mA ,IB = -15mA
IC = -500mA ,IB = -50mA
-0.4
VCE(sat)
collector-emitter saturation voltage
-
V
-0.75
IC = -150mA; IB = -15mA
IC = -500mA; IB = -50mA
-0.95
-1.3
VBE(sat)
base-emitter saturation voltage
transition frequency
-0.75
200
V
IC = -20mA; VCE= -10V;
f =100MHz
fT
-
MHz
TYPICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Document number: BL/SSSTC074
Rev.A
www.galaxycn.com
2
BL Galaxy Electrical
Production specification
PNP General Purpose Transistor
MMBT4403
Document number: BL/SSSTC074
Rev.A
www.galaxycn.com
3
BL Galaxy Electrical
Production specification
PNP General Purpose Transistor
MMBT4403
PACKAGE OUTLINE
Plastic surface mounted package
SOT-23
SOT-23
A
Dim
A
Min
2.85
1.25
Max
2.95
1.35
E
B
K
B
C
D
E
1.0Typical
0.37
0.35
1.85
0.02
0.43
0.48
1.95
0.1
J
D
G
H
J
G
H
0.1Typical
C
K
2.35
2.45
All Dimensions in mm
SOLDERING FOOTPRINT
Unit : mm
PACKAGE INFORMATION
Device
Package
SOT-23
Shipping
MMBT4403
3000/Tape&Reel
Document number: BL/SSSTC074
Rev.A
www.galaxycn.com
4
相关型号：
MMBT4403-13
Small Signal Bipolar Transistor, 0.6A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon, PLASTIC PACKAGE-3
DIODES
MMBT4403-T1
Small Signal Bipolar Transistor, 0.6A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon, SOT-23, 3 PIN
SAMSUNG
©2020 ICPDF网 联系我们和版权申明